FFSB10120A

FFSB10120A Silicon Carbide Schottky Diode 1200 V, 10 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. Features Max Junction Temperature 175°C Avalanche Rated 100 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits www.onsemi.com 1., 3. Cathode 2. Anode Schottky Diode 3 1 2 D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ MARKING DIAGRAM $Y&Z&3&K FFSB 10120A $Y &Z &3 &K FFSB10120A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 1 September, 2019 − Rev. 1 Publication Order Number: FFSB10120A/D FFSB10120A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VRRM EAS ...