FFSD1065B-F085

Silicon Carbide Schottky Diode 650 V, 10 A FFSD1065B-F085 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. Features Max Junction Temperature 175°C Avalanche Rated 49 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Automotive HEV−EV Onboard Chargers Automotive HEV−EV DC−DC Converters www.onsemi.com 1., 3. Cathode 2. Anode Schottky Diode DPAK−3 (TO−252, 3 LD) CASE 369AS MARKING DIAGRAM $Y&Z&3&K FFSD 1065B $Y &Z &3 &K FFSD1065B = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 1 October, 2020 − Rev. 4 Publication Order Number: FFSD1065B−F085/D FFSD1065B−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbo...