FFSH20120A

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-2L FFSH20120A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features Max Junction Temperature 175°C Avalanche Rated 200 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits DATA SHEET www.onsemi.com 1. Cathode 2. Anode Schottky Diode 1 2 TO−247−2LD CASE 340CL MARKING DIAGRAM AYWWZZ FFSH 20120A A YWW ZZ FFSH20120A = Assembly Plant Code = Date Code (Year & Week) = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 1 January, 2023 − Rev. 3 Publication Order Number: FFSH20120A/D FFSH20120A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VRRM Peak Repeti...