FFSP05120A

FFSP05120A — Silicon Carbide Schottky Diode www.onsemi.com FFSP05120A Silicon Carbide Schottky Diode 1200 V, 5 A Features Max Junction Temperature 175 °C Avalanche Rated 55 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. 1 2 TO-220-2L 1. Cathode 2. Anode 1. Cathode Absolute Maximum Ratings TC = 25 °C unless otherwise noted. Symbol Parameter VRRM EAS IF Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy Continuous Rectified Forward Current @ TC < 160 °C Continuous Rectified Forward Current @ TC < 135°C (Note 1) IF, Max IF,SM IF,RM Ptot TJ, TSTG Non-Repetitive Peak Forward Surge Cur- TC = 25 °C, 10 μs rent TC = 150 °C, 10 μs Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms Power Dissipation TC = 25 °C TC = 150...