FFSP08120A — Silicon Carbide Schottky Diode
FFSP08120A
Silicon Carbide Schottky Diode
1200 V, 8 A Features
• Max Juncti...
FFSP08120A — Silicon Carbide Schottky Diode
FFSP08120A
Silicon Carbide Schottky Diode
1200 V, 8 A Features
Max Junction Temperature 175 °C Avalanche Rated 80 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery
Applications
General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits
November 2016
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
1 2
TO-220-2L
1. Cathode 2. Anode
1. Cathode
2. Anode
Absolute Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol
Parameter
VRRM EAS IF
IF, Max
IF,SM IF,RM
Ptot
TJ, TSTG
Peak Repetitive Reverse
Voltage
Single Pulse Avalanche Energy
(Note 1)
Continuous Rectified Forward Current @ TC < 148 °C
Non-Repetitive Peak Forward Surge Cur- TC = 25 °C, 10 μs
rent TC = 150 °C, 10 μs
Non-Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
Power Dissipation
TC = 25 °C TC = 150 °C
Operating and Storage Temperature Ra...