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FGA20S125P

Fairchild Semiconductor

IGBT

FGA20S125P — 1250 V, 20 A Shorted-anode IGBT November 2014 FGA20S125P 1250 V, 20 A Shorted-anode IGBT Features • High...


Fairchild Semiconductor

FGA20S125P

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FGA20S125P — 1250 V, 20 A Shorted-anode IGBT November 2014 FGA20S125P 1250 V, 20 A Shorted-anode IGBT Features High Speed Switching Low Saturation Voltage: VCE(sat) = 2.0 V @ IC = 20 A High Input Impedance RoHS Compliant Applications Induction Heating, Microwave oven General Description Using advanced field stop trench and shorted anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven. C GCE TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description VCES VGES IC ICM (1) Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25oC @ TC = 100oC IF Diode Continuous Forward Current @ TC = 25oC IF Diode Continuous Forward C...




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