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FGA25N120 Datasheet

Part Number FGA25N120
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description NPT Trench IGBT
Datasheet FGA25N120 DatasheetFGA25N120 Datasheet (PDF)

FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applications • Induction Heating, Microwave Oven Description Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT .

  FGA25N120   FGA25N120






Part Number FGA25N120FTD
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Field Stop Trench IGBT
Datasheet FGA25N120 DatasheetFGA25N120FTD Datasheet (PDF)

FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT March 2013 FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Features • Field Stop Trench Technology • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 25 A • High Input Impedance • RoHS Complaint Applications • Induction Heating, Microvewave Oven General Description Using advanced field stop trench technology, Fairchild®’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applicati.

  FGA25N120   FGA25N120







Part Number FGA25N120ANTD_F109
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 25A NPT Trench IGBT
Datasheet FGA25N120 DatasheetFGA25N120ANTD_F109 Datasheet (PDF)

FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT April 2013 FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V  @ IC = 25 A and TC = 25C • Low Switching Loss: Eoff, typ = 0.96 mJ  @ IC = 25 A and TC = 25C • Extremely Enhanced Avalanche Capability Applications • Induction Heating, Microwave Oven Description Using Fairchild®'s proprietary trench design .

  FGA25N120   FGA25N120







Part Number FGA25N120ANTDTU-F109
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description NPT Trench IGBT
Datasheet FGA25N120 DatasheetFGA25N120ANTDTU-F109 Datasheet (PDF)

FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applications • Induction Heating, Microwave Oven Description Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT .

  FGA25N120   FGA25N120







Part Number FGA25N120ANTDTU
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description NPT Trench IGBT
Datasheet FGA25N120 DatasheetFGA25N120ANTDTU Datasheet (PDF)

FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applications • Induction Heating, Microwave Oven Description Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT .

  FGA25N120   FGA25N120







Part Number FGA25N120ANTDTU
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description IGBT
Datasheet FGA25N120 DatasheetFGA25N120ANTDTU Datasheet (PDF)

FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applications • Induction Heating, Microwave Oven April 2014 Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V .

  FGA25N120   FGA25N120







NPT Trench IGBT

FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applications • Induction Heating, Microwave Oven Description Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven. C GCE TO-3P Absolute Maximum Ratings Symbol Description VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25°C @ TC = 100°C Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current @ TC = 25°C @ TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25°C @ TC = 100°C Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Ther.


2021-10-09 : CD4017    FGA25N120ANTDTU-F109    FGA25N120ANTDTU    FGA25N120    FGH60N60   


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