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FGA25S125P

Fairchild Semiconductor

IGBT

FGA25S125P — 1250 V, 25 A Shorted-anode IGBT FGA25S125P 1250 V, 25 A Shorted-anode IGBT February 2016 Features • High...


Fairchild Semiconductor

FGA25S125P

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Description
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT FGA25S125P 1250 V, 25 A Shorted-anode IGBT February 2016 Features High Speed Switching Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A High Input Impedance RoHS Compliant Applications Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven. C G CE TO-3PN Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Opera...




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