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FGD2040G3-F085

ON Semiconductor

IGBT

EcoSPARK) 3 Ignition IGBT 200 mJ, 400 V, N-Channel Ignition IGBT Product Preview FGD2040G3-F085 Features • SCIS Energy =...


ON Semiconductor

FGD2040G3-F085

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Description
EcoSPARK) 3 Ignition IGBT 200 mJ, 400 V, N-Channel Ignition IGBT Product Preview FGD2040G3-F085 Features SCIS Energy = 200 mJ at TJ = 25°C Low Saturation Voltage Logic Level Gate Drive AEC−Q101 Qualified and PPAP Capable RoHS Compliant Applications Automotive Ignition Coil Driver Circuits High Current Ignition System Coil on Plug Applications MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Parameter Value Units BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ, TSTG Collector−to−Emitter Breakdown Voltage (IC = 1 mA) Emitter−to−Collector Voltage − Reverse Battery Condition (IC = 10 mA) ISCIS = 11.5 A, L = 3.0 mHy, RGE = 1 KW, TC = 25°C (Note 1) ISCIS = 9.1 A, L = 3.0 mHy, RGE = 1 KW, TC = 150°C (Note 2) Collector Current Continuous at VGE = 5.0 V, TC = 25°C Collector Current Continuous at VGE = 5.0 V, TC = 110°C Gate−to−Emitter Voltage Continuous Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C Operating Junction and Storage Temperature Range 400 V 28 V 200 mJ 125 mJ 23.6 A 13.6 A ±10 125 0.83 −55 to 175 V W W/°C °C TL Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 300 °C TPKG Reflow soldering according to JESD020C 260 °C ESD HBM − Electrostatic Discharge Voltage at 100 pF, 1500 W 4 kV CDM − Electrostatic Discharge Voltage 2 kV at 1 W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functiona...




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