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FGD2736G3-F085V

ON Semiconductor

IGBT

FGD2736G3-F085V EcoSPARK) 3 Ignition IGBT 270 mJ, 360 V, N−Channel Ignition IGBT Features • SCIS Energy = 270 mJ at TJ...


ON Semiconductor

FGD2736G3-F085V

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Description
FGD2736G3-F085V EcoSPARK) 3 Ignition IGBT 270 mJ, 360 V, N−Channel Ignition IGBT Features SCIS Energy = 270 mJ at TJ = 25°C Logic Level Gate Drive Low Saturation Voltage RoHS Compliant AEC−Q101 Qualified and PPAP Capable Applications Automotive Ignition Coil Driver Circuits High Current Ignition System Coil on Plug Applications MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Parameter Value Units BVCER Collector−to−Emitter Breakdown Voltage (IC = 1 mA) BVECS Emitter−to−Collector Voltage − Reverse Battery Condition (IC = 10 mA) ESCIS25 ISCIS = 13.4 A, L = 3.0 mHy, RGE = 1 KW TC = 25°C (Note 1) ESCIS150 ISCIS = 10.8 A, L = 3.0 mHy, RGE = 1 KW TC = 150°C (Note 2) IC25 Collector Current Continuous at VGE = 5.0 V, TC = 25°C IC110 Collector Current Continuous at VGE = 5.0 V, TC = 110°C VGEM Gate−to−Emitter Voltage Continuous PD Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C TJ/TSTG Operating Junction and Storage Temperature Range 360 28 270 170 37.5 24.3 ±10 150 1.1 −40 to +175 V V mJ mJ A A V W W/°C °C TL Lead Temperature for Soldering Purposes 300 °C (1/8″ from case for 10 s) TPKG Reflow soldering according to JESD020C 260 °C ESD HBM − Electrostatic Discharge Voltage at 100 pF, 1500 W 4 kV CDM − Electrostatic Discharge Voltage at 1 W 2 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be a...




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