FGH15T120SMD

IGBT - Field Stop, Trench 1200 V, 15 A FGH15T120SMD Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. Features FS Trench Technology, Positive Temperature Coefficient High Speed Switching Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 15 A 100% of the Parts Tested for ILM (Note 1) High Input Impedance This Device is Pb−Free and is RoHS Compliant Applications Solar Inverter, Welder, UPS & PFC Applications www.onsemi.com C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CH MARKING DIAGRAMS $Y&Z&3&K FGH15T120 SMD $Y &Z &3 &K FGH15T120SMD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 1 May, 2020 − Rev. 4 Publication Order Number: FGH15T120SMD/D FGH15T120SMD ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 1200 V VGES ±25 V ±30 V Collector Current TC = 25°C IC 30 A Collector Current TC = 100°C 15 A Clamped Inductive Load Current (Note 1) TC = 25°C ILM 60 A Pulsed Collector Curr...