FGH25N120FTDS

IGBT - Field Stop, Trench 1200 V, 25 A FGH25N120FTDS Description Using advanced field stop trench technology, ON Semiconductor’s 1200 V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. Features High Speed Switching Low Saturation Voltage: VCE(sat) =1.60 V @ IC = 25 A High Input Impedance These Device is Pb−Free and is RoHS Compliant Applications Solar Inverter, UPS, Welder, PFC www.onsemi.com C G E G C E TO−247−3 CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH25N120 FTDS $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH25N120FTDS = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2009 1 February, 2020 − Rev. 3 Publication Order Number: FGH25N120FTDS/D FGH25N120FTDS ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Description Symbol Rating Unit Collector to Emitter Voltage VCES 1200 V Gate to Emitter Voltage VGES ±25 V Collector Current TC = 25°C IC 50 A Collector Current TC = 100°C 25 A Pulsed Collector Current ICM (Note 1) 75 A Diode Forward Current TC = 25°C IF 50 A Diode Forward Current TC = 100°C 25 A Diode Maximum Forward Current IFM 75 A Maximum Power Dissipation TC = 25°C PD 313 W Maximum Power Dissipation TC = 100°C 125 W ...