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FGH30S130P IGBT Datasheet PDF

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Part Number FGH30S130P
Description IGBT
Feature FGH30S130P — 1300 V, 30 A Shorted-anod e IGBT November 2014 FGH30S130P 1300 V, 30 A Shorted-anode IGBT Features High Speed Switching
• Low Saturati on Voltage: VCE(sat) = 1.
75 V @ IC = 30 A
• High Input Impedance
• RoHS Co mpliant Applications
• Induction Heat ing, Microwave Oven General Descriptio n Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer super ior conduction and switching performanc es for soft switching applications.
The device can operate in parallel configu ration with exceptional avalanche capab ility.
This device is design .
Manufacture Fairchild Semiconductor
Datasheet
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FGH30S130P

 

 

 


 

 

 

Part Number FGH30S130P
Description IGBT
Feature IGBT - Shorted-Anode 1300 V, 30 A FGH30S 130P Description Using advanced field s top trench and shorted−anode technolo gy, ON Semiconductor’s shorted−anod e trench IGBTs offer superior conductio n and switching performances for soft s witching applications.
The device can o perate in parallel configuration with e xceptional avalanche capability.
This d evice is designed for induction heating and microwave oven.
Features
• High Speed Switching
• Low Saturation Volt age: VCE(sat) =1.
75 V @ IC = 30 A
• H igh Input Impedance
• This Device is Pb−Free and is RoHS Compliant Applica tions
• Induction Heating, Mic .
Manufacture ON Semiconductor
Datasheet
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