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FGH30T65UPDT

Fairchild Semiconductor

IGBT

FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT November 2013 FGH30T65UPDT 650V, 30A Field Stop Trench IGBT Feature...


Fairchild Semiconductor

FGH30T65UPDT

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Description
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT November 2013 FGH30T65UPDT 650V, 30A Field Stop Trench IGBT Features Maximum Junction Temperature : TJ = 175oC Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.65 V (Typ.) @ IC = 30 A 100% of Parts Tested ILM(2) High Input Impedance Tightened Parameter Distribution RoHS Compliant Short Circuit Ruggedness > 5 us @ 25oC E C G General Description Using novel field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for solar inverter , UPS and digital power generator where low conduction and switching losses are essential. Applications Solar Inverter, UPS, Digital Power Generator C COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol Description VCES VGES IC ICM(1) ILM(2) IF IFM(1) PD SCWT TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Transi...




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