FGH40N60SF

IGBT - Field Stop 600 V, 40 A FGH40N60SF Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A High Input Impedance Fast Switching: EOFF = 8 mJ/A This Device is Pb−Free and is RoHS Compliant Applications Solar Inverter, UPS, Welder, PFC www.onsemi.com C G E EC G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH40N60 SF $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40N60SF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2009 February, 2020 − Rev. 2 1 Publication Order Number: FGH40N60SF/D FGH40N60SF ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Description Symbol Ratings Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate−to−Emitter Voltage VCES 600 V VGES ±20 V ±30 Collector Current TC = 25°C IC 80 A Collector Current TC = 100°C 40 A Pulsed Collector Current TC = 25°C ICM (Note 1) 120 A Maximum Power Dissipation TC = 25°C PD 290 W Maximum Power Dissipation TC = 100°C 116 W Operating Junction Temperature TJ −55 to +150 °C Storage...