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FGH40N60SMDF

Fairchild Semiconductor

Field Stop IGBT

FGH40N60SMDF — 600 V, 40 A Field Stop IGBT November 2013 FGH40N60SMDF 600 V, 40 A Field Stop IGBT Features • Maximum J...


Fairchild Semiconductor

FGH40N60SMDF

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Description
FGH40N60SMDF — 600 V, 40 A Field Stop IGBT November 2013 FGH40N60SMDF 600 V, 40 A Field Stop IGBT Features Maximum Junction Temperature : TJ = 175°C Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A High Input Impedance Fast Switching: EOFF = 6.5 uJ/A Tightened Parameter Distribution RoHS Compliant Applications Solar Inverter, UPS, Welder, PFC, Telecom, ESS General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(Diode) RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient C G E Ratings 600...




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