FGH40N60UF

IGBT - Field Stop 600 V, 40 A FGH40N60UF Description Using novel field stop IGBT technology, onsemi’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch−ing losses are essential. Features High Current Capability Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A High Input Impedance Fast Switching These Device is Pb−Free and is RoHS Compliant Applications Solar Inverter, UPS, Welder, PFC ABSOLUTE MAXIMUM RATINGS Description Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 600 V VGES ±20 V ±30 Collector Current Collector Current Pulsed Collector Current (Note 1) TC = 25°C IC TC = 100°C TC = 25°C ICM 80 A 40 A 120 A Maximum Power Dissipation TC = 25°C PD 290 W Maximum Power Dissipation TC = 100°C 116 W Operating Junction Temperature TJ −55 to °C +150 Storage Temperature Range Tstg −55to °C +150 Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. DATA SHEET www.onsemi.com EC G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAMS $Y&Z&3&K FGH40N60 UF $Y &Z &3 &K FG...