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FGH40T120SMD-F155 Datasheet

Part Number FGH40T120SMD-F155
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description IGBT
Datasheet FGH40T120SMD-F155 DatasheetFGH40T120SMD-F155 Datasheet (PDF)

IGBT - Field Stop, Trench 1200 V, 40 A FGH40T120SMD, FGH40T120SMD-F155 Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. Features • FS Trench Technology, Positive Temperature Coefficient • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • 100% of the Parts tested for ILM(1) • High .

  FGH40T120SMD-F155   FGH40T120SMD-F155






IGBT

IGBT - Field Stop, Trench 1200 V, 40 A FGH40T120SMD, FGH40T120SMD-F155 Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. Features • FS Trench Technology, Positive Temperature Coefficient • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • 100% of the Parts tested for ILM(1) • High Input Impedance • These Devices are Pb−Free and are RoHS Compliant Applications • Solar Inverter, Welder, UPS & PFC applications www.onsemi.com C G E E C G TO−247−3LD CASE 340CK TO−247−3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH40T120 SMD $Y &Z &3 &K FGH40T120SMD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 1 July, 2021 − Rev. 5 Publication Order Number: FGH40T120SMD/D FGH40T120SMD, FGH40T120SMD−F155 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Description Symbol Ratings Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 1200 V VGES ±25 V ±30 V Collector Current TC = 25°C IC 80 A Collector Current TC = 100°C 40 A Clamped Inductive Load Current TC = 25°C IL.


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