FGH40T65SPD-F085

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SPD-F085 Description Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation. Features Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ.) @ IC = 40 A 100% Of The Part Are Dynamically Tested (Note 1) Short Circuit Ruggedness > 5 mS @ 25°C Maximum Junction Temperature: TJ = 175°C Fast Switching Tight Parameter Distribution Positive Temperature Co−efficient for Easy Parallel Operating Co−Packed With Soft And Fast Recovery Diode AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant Applications On−board Charger Air Conditioner Compressor PTC Heater Motor Drivers Other Automotive Power−Train Applications www.onsemi.com VCES 650 V Eon 1.16 mJ C VCE(Sat) 1.85 V G E EC G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH40T65 SPD © Semiconductor Components Industries, LLC, 2016 February, 2021 − Rev. 3 $Y &Z &3 &K FGH40T65SPD = ON Semiconductor Logo = Assembly Plant Code = 3−Digit Data code = 2−Digit Lot Traceability code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2...