FGH40T65SPD

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SPD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.85 V (Typ.) @ IC = 40 A High Input Impedance Fast Switching Tighten Parameter Distribution Short Circuit Ruggedness > 5 ms @ 25°C This Device is Pb−Free and is RoHS Compliant Applications Solar Inverter, UPS, Welder, PFC, Telecom, ESS www.onsemi.com C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH40T65 SPD $Y &Z &3 &K FGH40T65SPD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 1 November, 2020 − Rev. 4 Publication Order Number: FGH40T65SPD/D FGH40T65SPD ABSOLUTE MAXIMUM RATINGS Description Symbol FGH40T65SPD−F155 Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 650 V VGES ±20 V ±30 V Collector Current TC = 25°C IC 80 A Collector Curren...