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FGH40T65UQDF Datasheet

Part Number FGH40T65UQDF
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description IGBT
Datasheet FGH40T65UQDF DatasheetFGH40T65UQDF Datasheet (PDF)

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UQDF Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO. Features • Max Junction Temperature 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Satu.

  FGH40T65UQDF   FGH40T65UQDF






IGBT

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UQDF Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO. Features • Max Junction Temperature 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.33 V (Typ.) @ IC = 40 A • 100% of the Parts Tested for ILM • High Input Impedance • Fast Switching • Tighten Parameter Distribution • This Device is Pb−Free and is RoHS Compliant Applications • Induction Heating, MWO www.onsemi.com VCES 650 V IC 40 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH40T65 UQDF © Semiconductor Components Industries, LLC, 2016 November, 2019 − Rev. 3 $Y &Z &3 &K FGH40T65UQDF = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FGH40T65UQDF/D FGH40T65UQDF ABSOLUTE MAXIMUM RATINGS Symbol Description FGH40T65UQDF Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage 650 V ±20 V ±30 V IC Collector Current TC = 25°C 80 A TC = 100°C 40 A ILM (Note 1).


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