IGBT - Field Stop, Trench
650 V, 40 A
FGH40T65UQDF
Description Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 4th generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.
Features
• Max Junction Temperature 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Satu.