| DatasheetsPDF.com |
FGH4L40T120LQD IGBT Datasheet PDFIGBT IGBT |
| Part Number | FGH4L40T120LQD |
|---|---|
| Description | IGBT |
| Feature | IGBT - Ultra Field Stop
1200 V, 40 A, VC E(Sat) = 1. 55V, TO247 4L FGH4L40T120LQD This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost−ef fective Ultra Field Stop Trench constru ction, and provides superior performanc e in demanding switching applications, offering both low on−state voltage an d minimal switching loss. The IGBT is w ell suited for motor driver application s. Incorporated into the device is a so ft and fast co−packaged free−wheeli ng diode with a low forward voltage. F eatures • Extremely Efficient Trench with Field Stop Technology • Maximum Junction Temperature: TJ = . |
| Manufacture | ON Semiconductor |
| Datasheet |
|
|
| Part Number | FGH4L40T120LQD |
|---|---|
| Description | IGBT |
| Feature | IGBT - Ultra Field Stop
1200 V, 40 A, VC E(Sat) = 1. 55V, TO247 4L FGH4L40T120LQD This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost−ef fective Ultra Field Stop Trench constru ction, and provides superior performanc e in demanding switching applications, offering both low on−state voltage an d minimal switching loss. The IGBT is w ell suited for motor driver application s. Incorporated into the device is a so ft and fast co−packaged free−wheeli ng diode with a low forward voltage. F eatures • Extremely Efficient Trench with Field Stop Technology • Maximum Junction Temperature: TJ = . |
| Manufacture | ON Semiconductor |
| Datasheet |
|
|
|
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |