FGH50N3
July 2002
FGH50N3
300V, PT N-Channel IGBT
General Description
The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only ...
