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FGH50T65SQD IGBT Datasheet PDF

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Part Number FGH50T65SQD
Description IGBT
Feature IGBT - Field Stop, Trench 650 V, 50 A FG H50T65SQD Description Using novel field stop IGBT technology, ON Semiconductor ’s new series of field stop 4th gener ation IGBTs offer the optimum performan ce for solar inverter, UPS, welder, tel ecom, ESS and PFC applications where lo w conduction and switching losses are e ssential.
Features
• Max Junction Tem perature TJ = 175°C
• Positive Tempe rature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.
6 V (Typ.
) @ IC = 50 A
• 100% of th e Parts Tested for ILM
• High Input I mpedance
• Fast Switching
• Tig .
Manufacture ON Semiconductor
Datasheet
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Part Number FGH50T65SQD
Description Field Stop Trench IGBT
Feature FGH50T65SQD 650 V, 50 A Field Stop Trenc h IGBT FGH50T65SQD 650 V, 50 A Field S top Trench IGBT April 2016 Features Maximum Junction Temperature : TJ =1 75oC
• Positive Temperaure Co-efficie nt for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.
6 V(Typ.
) @ IC = 5 0 A
• 100% of the Parts Tested for IL M(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distrib ution
• RoHS Compliant General Descr iption Using novel field stop IGBT tech nology, Fairchild’s new series of fie ld stop 4th generation IGBTs offer the optimum performance for solar inve .
Manufacture Fairchild Semiconductor
Datasheet
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