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FGH50T65SQD IGBT Datasheet PDFIGBT IGBT |
　
　
　
| Part Number | FGH50T65SQD |
|---|---|
| Description | IGBT |
| Feature | IGBT - Field Stop, Trench
650 V, 50 A
FG H50T65SQD
Description Using novel field stop IGBT technology, ON Semiconductor ’s new
series of field stop 4th gener ation IGBTs offer the optimum performan ce for solar inverter, UPS, welder, tel ecom, ESS and PFC applications where lo w conduction and switching losses are e ssential. Features • Max Junction Tem perature TJ = 175°C • Positive Tempe rature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1. 6 V (Typ. ) @ IC = 50 A • 100% of th e Parts Tested for ILM • High Input I mpedance • Fast Switching • Tig . |
| Manufacture | ON Semiconductor |
| Datasheet |
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| Part Number | FGH50T65SQD |
|---|---|
| Description | Field Stop Trench IGBT |
| Feature | FGH50T65SQD 650 V, 50 A Field Stop Trenc h IGBT
FGH50T65SQD
650 V, 50 A Field S top Trench IGBT
April 2016
Features
â €¢ Maximum Junction Temperature : TJ =1 75oC • Positive Temperaure Co-efficie nt for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1. 6 V(Typ. ) @ IC = 5 0 A • 100% of the Parts Tested for IL M(1) • High Input Impedance • Fast Switching • Tighten Parameter Distrib ution • RoHS Compliant General Descr iption Using novel field stop IGBT tech nology, Fairchild’s new series of fie ld stop 4th generation IGBTs offer the optimum performance for solar inve . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
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