DatasheetsPDF.com

FGH60N60SFDTU-F085 Datasheet

Part Number FGH60N60SFDTU-F085
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description IGBT
Datasheet FGH60N60SFDTU-F085 DatasheetFGH60N60SFDTU-F085 Datasheet (PDF)

IGBT - Field Stop 600 V, 60 A FGH60N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 60 A • High Input Impedance • Fast Switching • Qualified to Automotive Requirements of AEC−Q101 • This Device is Pb−Fre.

  FGH60N60SFDTU-F085   FGH60N60SFDTU-F085






IGBT

IGBT - Field Stop 600 V, 60 A FGH60N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 60 A • High Input Impedance • Fast Switching • Qualified to Automotive Requirements of AEC−Q101 • This Device is Pb−Free and is RoHS Compliant Applications • Automotive chargers, Converters, High Voltage Auxiliaries • Inverters, PFC, UPS www.onsemi.com C G E EC G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH60N60 SFDTU $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH60N60SFDTU = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 February, 2020 − Rev. 3 1 Publication Order Number: FGH60N60SFDTU−F085/D FGH60N60SFDTU−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Description Symbol Ratings Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate−to−Emitter Voltage VCES 600 V VGES ±20 V ±30 V Collector Current TC = 25°C IC 120 A TC = 100°C 60 A Pulsed Collector Current TC = 25°C ICM (Note 1) 180 A Maximum Power Dissipation TC = 25°C .


2019-02-08 : LP079X01-SMA1    CFAH0802A-GGH-JT    R2J20655BNP    CFAH0802A-GYH-JT    HM-6758    SQM120P10-10m1L    FAN8732G    FAN8732BG    FAN8732CG    Si2377EDS   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)