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FGH60N60UFDTU_F085

Fairchild Semiconductor

IGBT

FGH60N60UFDTU_F085 — 600V, 60A Field Stop IGBT FGH60N60UFDTU_F085 600V, 60A Field Stop IGBT Features • High Current Cap...


Fairchild Semiconductor

FGH60N60UFDTU_F085

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Description
FGH60N60UFDTU_F085 — 600V, 60A Field Stop IGBT FGH60N60UFDTU_F085 600V, 60A Field Stop IGBT Features High Current Capability Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 60 A High Input Impedance Fast Switching RoHS Compliant Qualified to Automotive Requirements of AEC-Q101 Applications Automotive chargers, Converters, High Voltage Auxiliaries Inverters, PFC, UPS April 2015 General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate-to-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive test , Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient ©2015 Fairchild Semiconductor Corporation 1 FGH60N60UFDTU_F085 Rev.1.0 C G E Rati...




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