DatasheetsPDF.com

FGH60N6S2 Datasheet

Part Number FGH60N6S2
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 600V/ SMPS II Series N-Channel IGBT
Datasheet FGH60N6S2 DatasheetFGH60N6S2 Datasheet (PDF)

FGH60N6S2 August 2003 FGH60N6S2 600V, SMPS II Series N-Channel IGBT General Description The FGH60N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss,.

  FGH60N6S2   FGH60N6S2






600V/ SMPS II Series N-Channel IGBT

FGH60N6S2 August 2003 FGH60N6S2 600V, SMPS II Series N-Channel IGBT General Description The FGH60N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • • • • • • Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits Features • 100kHz Operation at 390V, 52A • 200kHZ Operation at 390V, 31A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125oC • Low Gate Charge . . . . . . . . 140nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical • UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ • Low Conduction Loss Formerly Developmental Type TA49346. Package TO-247 Symbol E C G C G COLLECTOR (Back-Metal) E Device Maximum Ratings TC= 25°C unless otherwise noted Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC = 25°C Collector Current Co.


2005-03-30 : M27C320    M27C322    M27C400    M27C405    M27C512    2SD600    2SD600K    2SD601A    2SD602    2SD602A   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)