IGBT - Field Stop, Trench
650 V, 75 A
FGH75T65SQDT
Description Using novel field stop IGBT technology, ON Semiconductor’...
IGBT - Field Stop, Trench
650 V, 75 A
FGH75T65SQDT
Description Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Features
Max Junction Temperature TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation
Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A 100% of the Parts Tested for ILM High Input Impedance Fast Switching Tighten Parameter Distribution This Device is Pb−Free and is RoHS Compliant
Applications
Solar Inverter, UPS, Welder, Telecom, ESS, PFC
www.onsemi.com
VCES 650 V
IC 75 A
C
G E
E C G
COLLECTOR (FLANGE)
TO−247−3LD CASE 340CH
MARKING DIAGRAM
$Y&Z&3&K FGH75T65 SQDT
© Semiconductor Components Industries, LLC, 2017
November, 2019 − Rev. 3
$Y &Z &3 &K FGH75T65SQDT
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
1
Publication Order Number:
FGH75T65SQDT/D
FGH75T65SQDT
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
FGH50T65SQD−F155
Unit
VCES VGES
Collector to Emitter
Voltage Gate to Emitter
Voltage Transient Gate to Emitter
Voltage
650
V
±20
V
±30
V
IC
Collector Current
TC = 25°C
150
A
TC = 100°C
75
A
ILM (Note 1) Pu...