FGHL40T65LQDT

Field Stop Trench IGBT 40 A, 650 V FGHL40T65LQDT Field stop 4th generation Low VCE(Sat) IGBT technology and Full current rated copak Diode technology. Features Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ.) @ IC = 40 A 100% of the Parts are Tested for ILM (Note 2) Smooth and Optimized Switching Tight Parameter Distribution RoHS Compliant Typical Applications Solar Inverter UPS, ESS PFC, Converters MAXIMUM RATINGS Rating Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VCES 650 V VGES ±20 V ±30 Collector Current (Note 1) @ TC = 25°C IC 60 A @ TC = 100°C 40 Pulsed Collector Current (Note 2) ILM 160 A Pulsed Collector Current (Note 3) ICM 160 A Diode Forward Current @ TC = 25°C IF 60 A @ TC = 100°C 40 Pulsed Diode Maximum Forward Current IFM 160 A Maximum Power Dissipation @ TC = 25°C PD 273 W @ TC = 100°C 136 Operating Junction and Storage Temperature Range TJ, −55 to °C TSTG +175 Maximum Lead Temp. for Soldering Purposes (1/8″ from case for 5 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. VCC = 400 V, VGE = 15 V, I...