Field Stop Trench IGBT
650 V, 75 A
FGHL75T65MQDTL4
Field stop 4th generation mid speed IGBT technology Full current ra...
Field Stop Trench IGBT
650 V, 75 A
FGHL75T65MQDTL4
Field stop 4th generation mid speed IGBT technology Full current rated copack Diode technology.
Features
Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation
Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 75 A 100% of the Parts are Tested for ILM (Note 2) Smooth and Optimized Switching Tight Parameter Distribution RoHS Compliant
Typical Applications
Solar Inverter UPS, ESS PFC, Converters
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector to Emitter
Voltage
Gate to Emitter
Voltage Transient Gate to Emitter
Voltage
VCES 650
V
VGES ±20
V
±30
Collector Current (Note 1)
@ TC = 25°C @ TC = 100°C
IC
80
A
75
Pulsed Collector Current (Note 2)
ILM
300
A
Pulsed Collector Current (Note 3)
ICM
300
A
Diode Forward Current (Note 1) @ TC = 25°C
IF
80
A
@ TC = 100°C
75
Pulsed Diode Maximum Forward Current
IFM
300
A
Maximum Power Dissipation @ TC = 25°C @ TC = 100°C
PD
375
W
188
Operating Junction and Storage Temperature Range
TJ, −55 to °C TSTG +175
Maximum Lead Temp. for Soldering Purposes (1/8″ from Case for 5 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. VCC = 400 V, VGE = 15 V,...