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FGL60N100D Datasheet

Part Number FGL60N100D
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description IGBT
Datasheet FGL60N100D DatasheetFGL60N100D Datasheet (PDF)

FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications Features • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode Application Home Appliance, Induction Heater, IH JAR, Micro Wave Oven C .

  FGL60N100D   FGL60N100D






Part Number FGL60N100BNTD
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPT IGBT
Datasheet FGL60N100D DatasheetFGL60N100BNTD Datasheet (PDF)

FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Applications • UPS, Welder March 2014 General Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This devi.

  FGL60N100D   FGL60N100D







IGBT

FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications Features • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode Application Home Appliance, Induction Heater, IH JAR, Micro Wave Oven C G TO-264 G C E TC = 25°C unless otherwise noted E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGL60N100D 1000 ± 25 60 42 120 15 176 70 -55 to +150 -55 to +150 300 Units V V A A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.71 2.08 25 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation FGL60N100D Rev. A .


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