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F ine S P N
F ineSiliconP ow erN etw orks
Preliminary
FGM100D06V1
VCES = 600V Ic = 100A VCE(ON) typ. = 2.2V @ Ic = 100A
“HALF-BRIDGE” IGBT
Features
▪ 10μs short circuit capability ▪ Low turn-off losses ▪ Short tail current
Applications
▪ AC & DC motor controls ▪ General purpose inverters ▪ Optimized for high current inverter stages (AC TIG welding machines) ▪ Servo controls ▪ UPS ▪ Robotics
Package : V1
Absolute Maximum Ratings @ Tc = 25℃ (per leg)
Symbol
VCES VGES IC .
HALF-BRIDGE IGBT
www.DataSheet.co.kr
F ine S P N
F ineSiliconP ow erN etw orks
Preliminary
FGM100D06V1
VCES = 600V Ic = 100A VCE(ON) typ. = 2.2V @ Ic = 100A
“HALF-BRIDGE” IGBT
Features
▪ 10μs short circuit capability ▪ Low turn-off losses ▪ Short tail current
Applications
▪ AC & DC motor controls ▪ General purpose inverters ▪ Optimized for high current inverter stages (AC TIG welding machines) ▪ Servo controls ▪ UPS ▪ Robotics
Package : V1
Absolute Maximum Ratings @ Tc = 25℃ (per leg)
Symbol
VCES VGES IC ICM IF IFM TSC Viso Tj Tstg Weight Mounting Torque
Parameter
Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Power Terminal Screw : M5 Terminal connection Screw : M5
Test condition
VGE = 0V,
Rating
600 ± 20
Unit
V V A A A A
IC = 250μA
TC = 70℃ (25℃) TC = 70℃ (25℃) TC = 70℃ (25℃)
100(130) 200(260) 80(100) 200
TC = 100℃ AC 1 minute
10 2500 -40 ~ 150 -40 ~ 125 190 3.5 3.5
μs
V ℃ ℃ g Nm Nm
Electrical Characteristics @ Tj = 25℃ (unless otherwise specified)
Symbol
V(BR)CES VCE(ON) VGE(th) ICES IGES VFM
Parameter
Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop
Min
600 3.0 -
Typ
2.2 4.5 1.6
Max
2.7 6.0 500 ±.