FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
July 2001
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
600V, SMPS II Series N-Channel IGB...
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
July 2001
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau
Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau
voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high
voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero
voltage and zero current switching circuits
Features
100kHz Operation at 390V, 14A 200kHZ Operation at 390V, 9A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC Low Gate Charge . . . . . . . . . 23nC at VGE = 15V Low Plateau
Voltage . . . . . . . . . . . . .6.5V Typical UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ Low Conduction Loss
IGBT formerly Developmental Type TA49336 Diode formerly Developmental Type TA49390
Package
JEDEC STYLE TO-247
Symbol
C
E
C G
JEDEC STYLE TO-220AB
JEDEC STYLE TO-263AB
E
C
G C G E
G
E
Device Maximum...