IGBT. FGP5N60UFD Datasheet

FGP5N60UFD Datasheet PDF

Part FGP5N60UFD
Description IGBT
Feature FGP5N60UFD 600V, 5A Field Stop IGBT FGP5N60UFD 600V, 5A Field Stop IGBT Features • High current cap.
Manufacture Fairchild Semiconductor
Datasheet
Download FGP5N60UFD Datasheet

FGP5N60UFD 600V, 5A Field Stop IGBT FGP5N60UFD 600V, 5A Fie FGP5N60UFD Datasheet





FGP5N60UFD
FGP5N60UFD
600V, 5A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.9V @ IC = 5A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFS
October 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS, and PFC applications where low conduc-
tion and switching losses are essential.
C
1 TO-220
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. juntion temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
600
± 20
10
5
15
81
32
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
1.55
3.2
62.5
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGP5N60UFD Rev. A
1
www.fairchildsemi.com



FGP5N60UFD
Package Marking and Ordering Information
Device Marking
Device
FGP5N60UFD
FGP5N60UFDTU
Package
TO-220
Packaging
Type
Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250µA
VGE = 0V, IC = 250µA
VCE = VCES, VGE = 0V, TC = 25oC
VCE = VCES, VGE = 0V,
TC = 125oC
VGE = VGES, VCE = 0V
600
-
-
-
-
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250µA, VCE = VGE
IC = 5A, VGE = 15V
IC = 5A, VGE = 15V,
TC = 125oC
4.0
-
-
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400V, IC = 5A,
RG = 20, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 5A,
RG = 20, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 5A,
VGE = 15V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
--
0.7 -
- 250
-1
- ±400
5.0 6.5
1.9 2.4
2.1 -
290 -
40 -
10 -
6
8
44
20
0.075
0.059
0.134
8
11
48
30
0.077
0.082
0.159
19.5
2.5
10.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V/oC
µA
mA
nA
V
V
V
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
FGP5N60UFD Rev. A
2
www.fairchildsemi.com




@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)