IGBT. FGPF10N60UNDF Datasheet

FGPF10N60UNDF Datasheet PDF

Part FGPF10N60UNDF
Description IGBT
Feature FGPF10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT FGPF10N60UNDF 600 V, 10 A Short Circuit Rated .
Manufacture Fairchild Semiconductor
Datasheet
Download FGPF10N60UNDF Datasheet

FGPF10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT FGPF10 FGPF10N60UNDF Datasheet





FGPF10N60UNDF
FGPF10N60UNDF
600 V, 10 A
Short Circuit Rated IGBT
Features
• Short Circuit Rated 10us
• High Current Capability
• High Input Impedance
• Fast Switching
• RoHS Compliant
September 2013
General Description
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
motor control and home appliances.
Applications
• Sewing Machine, CNC, Home Appliances, Motor Control
C
GCE
TO-220F
(Retractable)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
G
E
Ratings
600
± 20
20
10
30
10
5
42
17
-55 to +150
-55 to +150
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
Notes:
2: Mountde on 1” square PCB (FR4 or G-10 material)
©2012 Fairchild Semiconductor Corporation
FGPF10N60UNDF Rev. C2
1
Typ.
-
-
-
Max.
3.0
5.6
62.5
Unit
V
V
A
A
A
A
A
W
W
oC
oC
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com



FGPF10N60UNDF
Package Marking and Ordering Information
Device Marking
Device
FGPF10N60UNDF FGPF10N60UNDF
Package
TO-220F
Reel Size
-
Tape Width
-
Quantity
50ea
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0 V, IC = 250 μA
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 10 mA, VCE = VGE
IC = 10 A, VGE = 15 V
IC = 10 A, VGE = 15 V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc Short Circuit Withstand Time
VCC = 400 V, IC = 10 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
VCC = 400 V, IC = 10 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 125oC
VCC = 350 V,
RG = 100 Ω, VGE = 15 V,
TC = 150oC
600
-
-
5.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
--V
- 1 mA
- ±10 uA
6.8 8.5
2 2.45
2.3 -
V
V
V
517 pF
65 pF
20 pF
8.0
6.3
52.2
19.1 24.8
0.15
0.05
0.2
8.1
7.3
55.1
34.2
0.22
0.08
0.3
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
μs
©2012 Fairchild Semiconductor Corporation
FGPF10N60UNDF Rev. C2
2
www.fairchildsemi.com




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