FGPF50N30T

FGPF50N30T 300V, 50A PDP IGBT January 2008 FGPF50N30T 300V, 50A PDP IGBT Features High current capability Low saturation voltage: VCE(sat) =1.4V @ IC = 30A High input impedance Fast switching RoHS compliant tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications PDP System C TO-220F 1 1.Gate 2.Collector 3.Emitter G E Absolute Maximum Ratings Symbol VCES www.DataSheet4U.com VGES ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 25 C @ TC = 100oC o Ratings 300 ± 30 120 46.8 18.7 -55 to +150 -55 to +150 300 Units V V A W W o o o C C C Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 2.67 62.5 Units o o C /W C /W Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 * IC_pluse limited by max Tj ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGPF50N30T Rev. A FGPF50N30T 300V, 50A PDP IGBT Package Marking and Ordering Information Device Marking FGPF50N30T Device FGPF50N30TTU Package TO-220F Packaging Typ...