FGPF7N60RUFD

www.DataSheet4U.com FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK May 2006 FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK Features High speed switching Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A High input impedance CO-PAK, IGBT with FRD : trr = 50 ns (typ.) Short Circuit rated tm Applications Motor controls and general purpose inverters. Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature. C G 1 TO-220F 1.Gate 2.Collector 3.Emitter E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGP7N60RUFD 600 ± 20 14 7 21 12 60 41 16 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 3.0 4.2 62.5...