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FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK
May 2006
FGPF7N60RUFD
600V, 7A RUF IGBT CO-PAK
Features
• H...
www.DataSheet4U.com
FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK
May 2006
FGPF7N60RUFD
600V, 7A RUF IGBT CO-PAK
Features
High speed switching Low saturation
voltage : VCE(sat) = 1.95 V @ IC = 7A High input impedance CO-PAK, IGBT with FRD : trr = 50 ns (typ.) Short Circuit rated
tm
Applications
Motor controls and general purpose inverters.
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature.
C
G
1
TO-220F
1.Gate 2.Collector 3.Emitter
E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Description
Collector-Emitter
Voltage Gate-Emitter
Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C
FGP7N60RUFD
600 ± 20 14 7 21 12 60 41 16 -55 to +150 -55 to +150 300
Units
V V A A A A A W W °C °C °C
Thermal Characteristics
Symbol
RθJC(IGBT) RθJC(DIODE) RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Typ.
----
Max.
3.0 4.2 62.5...