http://www.fujielectric.com/products/semiconductor/
FGW40N120HD
Discrete IGBT
Discrete IGBT (High-Speed V series) 120...
http://www.fujielectric.com/products/semiconductor/
FGW40N120HD
Discrete IGBT
Discrete IGBT (High-Speed V series) 1200V / 40A
Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications Uninterruptible power supply Power coditionner Power factor correction circuit
Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Equivalent circuit
Items Collector-Emitter
Voltage Gate-Emitter
Voltage
DC Collector Current
Pulsed Collector Current Turn-Off Safe Operating Area
Diode Forward Current
Diode Pulsed Current
Short Circuit Withstand Time
IGBT Max. Power Dissipation FWD Max. Power Dissipation Operating Junction Temperature Storage Temperature
Symbols VCES VGES IC@25 IC@100 ICP IF@25 IF@100 IFP
tSC
PD_IGBT PD_FWD Tj Tstg
Characteristics 1200 ±20 70 40 120 120 52 30 120
5
340 190 -40 ~ +175 -55 ~ +175
Units
Remarks
V
V
A TC=25°C,Tj=150°C
A TC=100°C,Tj=150°C
A Note *1
A VCE≤1200V,Tj≤175°C
A
A
A Note *1
µs
VCC≤600V,VGE=12V Tj≤150°C
W
TC=25°C TC=25°C
°C
°C
Gate
Collector Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Collector-Emitter Breakdown
Voltage
Zero Gate
Voltage Collector Current
Gate-Emitter Leakage Current Gate-Emitter Threshold
Voltage
Collector-Emitter Saturation
Voltage
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Gate Charge
Turn-On Delay Time R...