http://www.fujielectric.com/products/semiconductor/
FGW40N120VD
Discrete IGBT
Discrete IGBT (High-Speed V series) 120...
http://www.fujielectric.com/products/semiconductor/
FGW40N120VD
Discrete IGBT
Discrete IGBT (High-Speed V series) 1200V / 40A
Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply
Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Equivalent circuit
Items Collector-Emitter
voltage Gate-Emitter
voltage
DC Collector Current
Pulsed Collector Current Turn-Off Safe Operating Area
Diode Forward Current
Diode Pulsed Current
Symbols VCES VGES IC@25 IC@100 ICP -
IF@25
IF@100
IFP
Short Circuit Withstand Time tSC
IGBT Max. Power Dissipation
PD_IGBT
FWD Max. Power Dissipation
PD_FWD
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics 1200 ±20 63 40 80 80 58 30 80
10
340 220 -40~+175 -55~+175
Units
Remarks
V
V
A TC=25°C, Tj=150°C
A TC=100°C, Tj=150°C
A Note *1
A VCE≤1200V, Tj≤175°C
A
A
A Note *1
μs
VCC≤640V, VGE=15V Tj≤150°C
W
TC=25°C TC=25°C
°C
°C
Gate
Collector Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Collector-Emitter Breakdown
Voltage Zero Gate
Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold
Voltage Collector-Emitter Saturation
Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance
Gate Charge
Turn-...