DatasheetsPDF.com

FGW75N60HD Datasheet

Part Number FGW75N60HD
Manufacturers Fuji Electric
Logo Fuji Electric
Description Discrete IGBT
Datasheet FGW75N60HD DatasheetFGW75N60HD Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ FGW75N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Equivalent circuit Items Collector-Emitter voltage Gate-Emitter volta.

  FGW75N60HD   FGW75N60HD






Part Number FGW75N60H
Manufacturers Fuji Electric
Logo Fuji Electric
Description Discrete IGBT
Datasheet FGW75N60HD DatasheetFGW75N60H Datasheet (PDF)

http://www.fujielectric.com/products/semiconductor/ FGW75N60H Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Discrete IGBT Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Collector-Emitter Voltage Gate-Emitter Voltage Symbols VCES VGES.

  FGW75N60HD   FGW75N60HD







Discrete IGBT

http://www.fujielectric.com/products/semiconductor/ FGW75N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Equivalent circuit Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Diode Pulsed Current IC@25 IC@100 ICP IF@25 IF@100 IFP Short Circuit Withstand Time tSC IGBT Max. Power Dissipation PD_IGBT FWD Max. Power Dissipation PD_FWD Operating Junction Temperature Tj Storage Temperature Tstg Characteristics 600 ±20 100 75 225 225 60 35 225 5 500 190 -40~+175 -55~+175 Units Remarks V V A TC=25°C, Tj=150°C Note *1 A TC=100°C, Tj=150°C A Note *2 A VCE≤600V, Tj≤175°C A Note *1 A A Note *1 μs VCC≤300V, VGE=12V Tj≤175°C W TC=25°C TC=25°C °C °C Gate Collector Emitter Note *1 : Current value limited by bonding wire. Note *2 : Pulse width limited by Tjmax. Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Collector-Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output .


2015-02-22 : PC87312    8253-5    A1150    A1300    D78F1145    XPT4990    CM8601    HF05D060ACE    XPT0030    SC8803   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)