FGY100T65SCDT

FGY100T65SCDT Field Stop Trench IGBT, Short Circuit Rated, 650V, 100A General Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential. Features Maximum Junction Temperature: TJ = 175°C Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 100 A High Input Impedance Fast Switching Short Cirruit Rated 5 ms Tighten Parameter Distribution These Devices are Pb−Free and are RoHS Compliant Applications Solar, UPS, Motor Control, ESS, HVAC www.onsemi.com C G E TO−247 CASE 340CD ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. ABSOLUTE MAXIMUM RATINGS (at TC = 25°C, Unless otherwise specified) Symbol Parameter Value Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage 650 V ±25 V ±30 V IC Collector Current @ TC = 25°C 200 A Collector Current @ TC = 100°C 100 A ILM (Note 1) Clamped Inductive Load Current @ TC = 25°C 300 A ICM (Note 2) Pulsed Collector Current 300 A IF Diode Forward Current @ TC = 25°C @ TC = 100°C A 200 100 IFM (Note 2) Pulsed Diode Maximum Forward Current 300 A PD Maximum Power Dissipation @ TC = 25°C 750 W Maximum Power Dissi...