FGY120T65SPD-F085

Field Stop Trench IGBT With Soft Fast Recovery Diode 650 V, 120 A FGY120T65SPD-F085 Features Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A Maximum Junction Temperature : TJ = 175°C Positive Temperature Co−efficient Tight Parameter Distribution High Input Impedance 100% of the Parts are Dynamically Tested Short Circuit Ruggedness > 6 ms @ 25°C Copacked with Soft, Fast Recovery Extremefast Diode AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device Benefits Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications Rugged Transient Reliability Outstanding Parallel Operation Performance with Balance Current Sharing Low EMI Applications Traction Inverter for HEV/EV Auxiliary DC/AC Converter Motor Drives Other Power−train Applications Requiring High Power Switch www.onsemi.com C G E GC E TO−247−3LD CASE 340CU MARKING DIAGRAM $Y&Z&3&K FGY120T 65SPD $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FGY120T65SPD= Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 1 March, 2020 − Rev. 3 Publication Order Number: FGY120T65SPD−F085/D FGY120T65SPD−F085 ABSOLUTE MAXIMUM RATINGS Symbol Description VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage IC INominal ICM IF PD SCWT dV/...