IGBT - Field Stop, Trench
75 A, 950 V
Product Preview FGY75T95SQDT
Trench Field Stop 4th generation High Speed IGBT co−...
IGBT - Field Stop, Trench
75 A, 950 V
Product Preview FGY75T95SQDT
Trench Field Stop 4th generation High Speed IGBT co−packaged with full current rated diode.
Features
Maximum Junction Temperature : TJ = 175℃ Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation
Voltage: VCE(Sat) = 1.69 V (Typ.) @ IC = 75 A Fast Switching Tighten Parameter Distribution These Devices are Pb−Free and are RoHS Compliant
Applications
Solar Inverter PFC DC/DC Converter
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector to Emitter
Voltage
VCES
950
V
Gate to Emitter
Voltage Transient Gate to Emitter
Voltage
VGES
±20
V
±30
Collector Current
@TC = 25°C
IC
@TC = 100°C
150
A
75
Pulsed Collector Current (Note 1)
ILM
300
A
Pulsed Collector Current (Note 2)
ICM
Diode Forward Current @TC = 25°C
IF
@TC = 100°C
300
A
150
A
75
Pulsed Diode Forward Current (Note 2)
IFM
300
A
Maximum Power Dissipation @TC = 25°C
PD
@TC = 100°C
434
W
217
Operating Junction / Storage Temperature Range
TJ, TSTG −55 to +175 °C
Maximum Lead Temp. for Soldering
TL
Purposes, 1/8” from case for 5 seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 700 V, VGE = 15 V, IC = 300 A, RG = 26 W, Inductive Load,
100% Tested 2. Pulse width l...
