FJAF4310

FJAF4310 — NPN Epitaxial Silicon Transistor October 2009 FJAF4310 NPN Epitaxial Silicon Transistor Features Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJAF4210 Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC RθJC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current (DC) Collector Dissipation (TC=25°C) Junction to Case Junction Temperature Storage Temperature 1 TO-3PF 1.Base 2.Collector 3.Emitter Value 200 140 6 10 1.5 80 1.48 150 - 55 ~ 150 Units V V V A A W °C/W °C °C Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) Cob fT Collector-Base Breakdown Voltage IC=5mA, IE=0 Collector-Emitter Breakdown Voltage IC=50mA, RBE=∞ Emitter-Base Breakdown Voltage IE=5mA, IC=0 Collector Cut-off Current VCB=200V, IE=0 Emitter Cut-off Current VEB=6V, IC=0 * DC Current Gain VCE=4V, IC=3A Collector-Emitter Saturation Voltage IC=5A, IB=0.5A Output Capacitance VCB=10V, f=1MHz Current Gain Bandwidth Product VCE=5V, IC=1A * Pulse Test : PW=20μs Min. 200 140 6 50 Typ. 250 30 Max. 10 10 180 0.5 Units V V V μA μA V pF MHz hFE Classification Classification hFE R 50 ~ 100 O 70 ~ 140 Y 90 ~ 180 © 2009 Fairchild Semiconductor Corporation FJAF4310 Rev. B0 1 www.fairchildsemi.com FJAF4310 — NPN Epitaxial Sili...