FET. FK330601 Datasheet

FK330601 Datasheet PDF


FK330601
This product complies with the RoHS Directive (EU 2002/95/EC).
FK330601
Silicon N-channel MOS FET
For switching circuits
Overview
FK330601 is N-channel small signal MOS FET employed small size surface
mounting package.
Features
High-speed switching
Low drain-source ON resistance: RDS(on) typ. = 8 W (VGS = 2.5 V)
Small size surface mounting package: SSSMini3-F2-B
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Drain-source surrender voltage
VDSS
Gate-source surrender voltage
VGSS
Drain current
ID
Peak drain current
IDP
Power dissipation
PD
Channel temperature
Tch
Storage temperature
Tstg
Rating
60
±12
100
200
100
150
–55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Package
Code
SSSMini3-F2-B
Pin Name
1: Gate
2: Source
3: Drain
Marking Symbol: CV
(D)
3
12
(G) (S)
Publication date: July 2010
Ver. CED
1


Part FK330601
Description Silicon N-channel MOS FET
Feature FK330601; This product complies with the RoHS Directive (EU 2002/95/EC). FK330601 Silicon N-channel MOS FET F.
Manufacture Panasonic
Datasheet
Download FK330601 Datasheet


This product complies with the RoHS Directive (EU 2002/95/EC FK330601 Datasheet
DReovcisNioon. . T2 T4-EA-12592 FK3306010L Silicon N-channe FK3306010L Datasheet





FK330601
FK330601
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Drain-source surrender voltage
VDSS ID = 1 mA, VGS = 0
60
Drain-source cutoff current
IDSS VDS = 60 V, VGS = 0
1.0
Gate-source cutoff current
IGSS VGS = ±10 V, VDS = 0
±10
Gate threshold voltage
Drain-source ON resistance
VTH
RDS(on)
ID = 1.0 mA, VDS = 3 V
ID = 10 mA, VGS = 2.5 V
ID = 10 mA, VGS = 4.0 V
0.9 1.2 1.5
8 15
6 12
Forward transfer admittance
YfsID = 10 mA, VDS = 3 V, f = 1 kHz
20 60
Short-circuit input capacitance (Common source) Ciss
12
Short-circuit output capacitance (Common source) Coss VDS = 3 V, VGS = 0, f = 1 MHz
7
Reverse transfer capacitance (Common source)
Crss
3
Turn-on time *
ton
VDD = 3 V, VGS = 0 V to 3 V,
RL = 300 W
100
Turn-off time *
toff
VDD = 3 V, VGS = 3 V to 0 V,
RL = 300 W
100
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
VGS = 0 V to 3 V
VIN
50
G
VDD = 3 V
ID = 10 mA
RL = 300
D VOUT
VIN
VOUT
S
90%
10%
10%
90%
ton toff
Unit
V
mA
mA
V
W
W
mS
pF
pF
pF
ns
ns
2 Ver. CED



FK330601
This product complies with the RoHS Directive (EU 2002/95/EC).
FK330601
FK330601_ ID-VDS
ID VDS
100
Ta = 25°C
80
VGS = 4.0 V
60
2.5 V
40
20
1.8 V 2.1 V
FK330601_ ID-VGS
ID VGS
102
VDS = 3 V
10
Ta = 85°C
1
101 25°C
102 30°C
FK330601_ RDS(on)-VGS
RDS(on) VGS
102
Ta = 25°C
ID = 0.01 A
10
1
0
0 0.1 0.2 0.3 0.4 0.5
Drain-source voltage VDS (V)
FK330601_ RDS(on)-ID
RDS(on) ID
102
Ta = 25°C
10 VGS = 2.5 V
4.0 V
1
103
0
0.5 1.0 1.5 2.0
2.5
Gate-source voltage VGS (V)
FK330601_
PD
TPaD-Ta
120
100
80
60
40
101
0 2 4 6 8 10
Gate-source voltage VGS (V)
Area of safe operation for the FK330601
Safe operation area
103
TGala=ss25ep°Coxy board
(25.4 mm× 25.4 mm × t0.8 mm) coated with
copper foil, which has more than 300 mm2.
IDP = 0.2 A
100 ms
Limited by
102
RDS(on) = 12 (max)
(VGS = 4.0 V)
10 ms
1s
DC
10
10−1
10−1
1 10
Drain current ID (mA)
102
FK330601_Ciss , Crss , Coss -VDS
Ciss , Crss , Coss VDS
25
Ta = 25°C
20
15 Ciss
10
Coss
5
Crss
0
0 5 10 15 20
Drain-source voltage VDS (V)
20
0
0 40 80 120 160
Ambient temperature Ta (°C)
FK330601_|Yfs|-ID
Yfs  ID
1
Ta = 25°C
VDS = 3 V
101
102
103
1
10 102
Drain current ID (mA)
103
1102
101
1
10 102
Drain-source voltage VDS (V)
Ver. CED
3






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