This product complies with the RoHS Directive (EU 2002/95/EC).
FK8V0305
Silicon N-channel MOS FET
For DC-DC converter ...
This product complies with the RoHS Directive (EU 2002/95/EC).
FK8V0305
Silicon N-channel MOS FET
For DC-DC converter circuits
Overview N-channel single type, MOS FET in a compact surface mount type package.
Features
Low drain-source ON resistance: RDS(on) typ. = 11 mW (VGS = 10 V) High-speed switching: Qg = 5.1 nC Small size surface mounting package: WMini8-F1 Contributes to mount area reduction Eco-friendly Halogen-free package
Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender
voltage Gate-source surrender
voltage
Drain current *1
t = 10 s
VDSS VGSS
ID
33 ±20 8 10
V V
A
Peak drain current *1, 2 Souce current (Body diode)
Power dissipation *1
t = 10 s
IDP IS
(BD)
PD
32 8 1 1.5
A A
W
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Note) *1: Mounted on a glass epoxy PC board: 25.4 mm × 25...