FK8V03060L

DReovcisNioon. . T2 T4-EA-13170 FK8V03060L Silicon N-channel MOS FET For lithium-ion secondary battery protection circuit For DC-DC Converter  Features  Low drain-source On-state Resistance RDS(on) typ. = 22 m (VGS = 4.5 V)  High-speed switching : Qg = 3.8 nC  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol: 3F  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Drain-source Voltage VDS 33 V Gate-source Voltage Drain Current (Steady State) *1 Drain Current (t = 10 s) *1 Drain Current (Pulsed) *1,*2 Source Current (Pulsed) (Body Diode) *1,*2 Total Power Dissipation (Steady State) *1 Total Power Dissipation (t = 10 s) *1 VGS ID IDp ISp (BD) PD 20 6.5 8 26 6.5 1 1.5 V A W Channel Temperature Tch 150 C Operating Ambient Temperature Topr -40 to + 85 C Storage Temperature Range Tstg -55 to +150 ...