FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect ...
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKBA0024A is the high cell density trenched N-ch
MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA0024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKBA0024A
N-Ch 100V Fast Switching
MOSFETs Product Summary
BVDSS 100V
RDSON 10mΩ
ID 104A
PRPAK5X6 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ
Thermal Data
Symbol RθJA RθJC
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V1,6 Continuous Drain Current, VGS @ 10V1,6 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Jun...