FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect ...
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKBA3105 is the high cell density trenched P-ch
MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
FKBA3105
P-Ch 30V Fast Switching
MOSFETs
Product Summary
BVDSS -30V
RDSON 15mΩ
ID -45A
PRPAK5X6 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG
TJ
Thermal Data
Symbol RθJA RθJA RθJC
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 S...
