FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect ...
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKBA6016
N-Ch 60V Fast Switching
MOSFETs
Product Summary
BVDSS 60V
RDSON 12mΩ
ID 52A
Description
PRPAK5X6 Pin Configuration
The FKBA6016 is the high cell density trenched N-ch
MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=70℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Thermal Data
Symbol RθJA RθJC
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Tem...